ag (plastic) symbol parameter value unit v pp peak pulse load dump overvoltage see note 1 - 2 t amb =85 c 120 v p power dissipation on infinite heatsink t amb = 100 c5 w i fsm non repetitive surge peak forward current. t j initial = 25 c t = 10 ms 200 a t stg t j storage and junction temperature range. - 65 to + 175 170 c c t l maximum lead temperature for soldering during 10 sec at 4 mm from case. 230 c absolute ratings (limiting values) description transient voltage suppressor diode especially de- veloped for sensitive circuit protection in automo- tive systems such as dash board, car radios etc. its high surge current capability and instantaneous response to transients provide an efficient protec- tion against the load dump effect. transient voltage suppressor diode especially designed for load dump effect protection high surge current capability : 40 a / 40 ms exponential wave compliant with main standards such as: -iso / dtr 7637 features symbol parameter value unit r th (j-l) junction-leads on infinite heatsink 15 c/w r th (j-a) junction to ambient on printed circuit. l lead =10mm 50 c/w thermal resistances note 1 : for surges greater than the maximum values, the diode will present a short-circuit anode - cathode. note 2 : surge generator august 1998 ed 1a ? LDP24AS load dump protection transil 1/5
symbol parameter v rm stand-off voltage. v br breakdown voltage. v cl clamping voltage. i pp peak pulse current. a t temperature coefficient of v br . c capacitance t clamping clamping time (0v to v br ): tp = 1ps v f peak forward voltage drop (i fm = 10a) v f = 0.9 volt typ. electrical characteristics 0 t v pp v pp xe -(t/0.164) v ou tput voltage without d.u.t load dump wavef orm symbol test conditions min. typ. max. unit i rm t c = -40 c t c =25 c t c =85 c v rm = 24v 10 50 300 m a v br t c =25 ci r = 1ma 25 32 v v cl t c = -40 c t c =25 c t c =85 c i pp = 40a (note 2) 36 38 40 v a tt c =25 c 9.6 10 -4 / c c f = 1mhz v r = 0v 8000 pf note 2 : surge generator i d.u.t 1.5 ohms 0.5 ohms 3.5 ohms 47nf v pp 120v c<100 f 0 t i pp i pp /2 i tp = 40ms current th rough d.u.t i i f v f v v cl v br v rm i pp i rm v LDP24AS 2/5
pp (w) 110100 1000 10000 figure 1 : peak pulse power versus exponential pulse duration (t j initial =85 c). t %ipp 100 50 0 t r t < 10 s r t figure 2 : clamping voltage versus peak pulse current (t j initial =85 c). exponential waveform t = 40 ms------------- t = 1 ms________ LDP24AS 3/5
figure 5 : transient thermal impedance junction-ambient versus pulse duration (device mounted on pc board with l lead = 10mm). figure 4 : peak pulse power versus junction temperature. figure 3 : peak pulse current versus exponential pulse duration (t j initial =85 c). figure 6 : peak forward current versus peak forward voltage drop (typical values). order code stand off voltage load dump protection mesa glass ag case packaging: = ammopack rl = tape and reel ldp 24 a s rl LDP24AS 4/5
package mechanical data ag (plastic) lglod note 1 l l 1 note 1 l l 1 ob 2 ob 2 ref. dimensions notes millimeters inches min. max. min. max. a 9 0.354 1- the lead is not controlled within zone l1. 2- the minimum axial length within which the device may be placed bent at right angles is 0.79o (20 mm). b 20 0.787 ? c 8 0.315 ? d 1.35 1.45 0.053 0.057 l1 1.27 0.050 packaging : standard packaging is in tape and reel. weight = 2.16 g. marking : logo, date code, type code, cathode band. information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap- proval of stmicroelectronics. the st logo is a registered trademark of stmicroelectronics ? 1998 stmicroelectronics - printed in italy - all rights reserved. stmicroelectronics group of companies australia - brazil - canada - china - france - germany - italy - japan - korea - malaysia - malta - mexico - morocco - the netherlands singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a. LDP24AS 5/5
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